Charge-trapping characteristics of fluorinated thin ZrO2 film for nonvolatile memory applications

被引：29
|
作者：
Huang, X. D. [1 ]
Shi, R. P. [2 ]
Lai, P. T. [2 ]
机构：
[1] Southeast Univ, Minist Educ, Key Lab MEMS, Nanjing 210096, Jiangsu, Peoples R China
[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 16期
关键词：
INTERFACE; SILICON;
D O I：
10.1063/1.4873388
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of fluorine treatment on the charge-trapping characteristics of thin ZrO2 film are investigated by physical and electrical characterization techniques. The formation of silicate interlayer at the ZrO2/SiO2 interface is effectively suppressed by fluorine passivation. However, excessive fluorine diffusion into the Si substrate deteriorates the quality of the SiO2/Si interface. Compared with the ZrO2-based memory devices with no or excessive fluorine treatment, the one with suitable fluorine-treatment time shows higher operating speed and better retention due to less resistance of built-in electric field (formed by trapped electrons) against electron injection from the substrate and smaller trap-assisted tunneling leakage, resulting from improved ZrO2/SiO2 and SiO2/Si interfaces. (C) 2014 AIP Publishing LLC.
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页数：5
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