Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications

被引：8

作者：

Shi, R. P. ^{[1
]}

Huang, X. D. ^{[2
]}

Sin, Johnny K. O. ^{[3
]}

Lai, P. T. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China

[2] Southeast Univ, Key Lab MEMS, Minist Educ, Nanjing 210096, Jiangsu, Peoples R China

[3] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2016年 / 65卷

关键词：

Nonvolatile memory; Charge trapping; High-k dielectric; Nb-doped Ga2O3;

D O I：

10.1016/j.microrel.2016.07.148

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The charge-trapping properties of Nb-doped Ga2O3 are investigated by using an Al/Al2O3/GaNbO/SiO2/Si structure. Compared with the memory capacitor with pure Ga2O3, the one with lightly Nb-doped Ga2O3 shows better charge-trapping characteristics, including larger memory window (5.5 V at +/-6 V sweeping voltage), higher programming and erasing speeds due to its higher trapping efficiency resulted from increased trap density induced by the Nb doping. The sample with heavily Nb-doped Ga2O3 also shows improvements compared with the one with pure Ga2O3, but not as large as those for the lightly Nb-doped sample due to defects generated by excessive Nb doping. Erase saturation phenomenon is observed in all the samples, and can be suppressed by hole traps created by the Nb doping. (C) 2016 Published by Elseitier Ltd.

引用

页码：64 / 68

页数：5

共 50 条

[21] Al2O3–Cu2O composite charge-trapping nonvolatile memory
Jinqiu Liu
Jianxin Lu
Bo Xu
Yidong Xia
Jiang Yin
Zhiguo Liu
Journal of Materials Science: Materials in Electronics, 2017, 28 : 928 - 933
[22] Nitrided Tetragonal ZrO2 as the Charge-Trapping Layer for Nonvolatile Memory Application
Wu, Yung-Hsien
Chen, Lun-Lun
Lin, Yuan-Sheng
Li, Ming-Yen
Wu, Hsiao-Che
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) : 1290 - 1292
[23] Charge-trapping characteristics of BaTiO3 with and without nitridation for nonvolatile memory applications
Huang, X. D.
Shi, R. P.
Leung, C. H.
Lai, P. T.
MICROELECTRONICS RELIABILITY, 2014, 54 (11) : 2388 - 2391
[24] Charge-Trapping Devices Using Multilayered Dielectrics for Nonvolatile Memory Applications
Shih, Wen-Chieh
Cheng, Chih-Hao
Lee, Joseph Ya-min
Chiu, Fu-Chien
ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2013, 2013
[25] Zn-Doped Zr Oxynitride as Charge-Trapping Layer for Flash Memory Applications
Tao, Q. B.
Lai, P. T.
2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2013,
[26] Improved Charge-Trapping Characteristics of BaTiO3 by Zr Doping for Nonvolatile Memory Applications
Huang, X. D.
Sin, Johnny K. O.
Lai, P. T.
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (04) : 499 - 501
[27] Influence of Substrate Temperature on Structure and Properties of Nb-Doped β-Ga2O3 Films
Li, Ruidong
Deng, Jinxiang
Kong, Le
Meng, Junhua
Luo, Juxin
Zhang, Qing
Gao, Hongli
Yang, Qianqian
Wang, Guisheng
Wang, Xiaolei
JOURNAL OF ELECTRONIC MATERIALS, 2022, 51 (05) : 2390 - 2395
[28] Influence of Substrate Temperature on Structure and Properties of Nb-Doped β-Ga2O3 Films
Ruidong Li
Jinxiang Deng
Le Kong
Junhua Meng
Juxin Luo
Qing Zhang
Hongli Gao
Qianqian Yang
Guisheng Wang
Xiaolei Wang
Journal of Electronic Materials, 2022, 51 : 2390 - 2395
[29] Optical and Electronic Energy Band Properties of Nb-Doped β-Ga2O3 Crystals
Long, Xianjian
Niu, Wenlong
Wan, Lingyu
Chen, Xian
Cui, Huiyuan
Sai, Qinglin
Xia, Changtai
Talwar, Devki N.
Feng, Zhechuan
CRYSTALS, 2021, 11 (02): : 1 - 8
[30] Improved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory Applications
Huang, X. D.
Shi, R. P.
Sin, Johnny K. O.
Lai, P. T.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016, 16 (01) : 38 - 42

← 1 2 3 4 5 →