Chemical insight into origin of forming-free resistive random-access memory devices

被引：10

作者：

Wu, X. ^{[1
,2
,3
]}

Fang, Z. ^{[1
,2
]}

Li, K. ^{[4
]}

Bosman, M. ^{[5
]}

Raghavan, N. ^{[1
]}

Li, X. ^{[2
]}

Yu, H. Y. ^{[1
]}

Singh, N. ^{[2
]}

Lo, G. Q. ^{[2
]}

Zhang, X. X. ^{[4
]}

Pey, K. L. ^{[1
,3
]}

机构：

[1] Nanyang Technol Univ, Div Microelect, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] ASTAR, Inst Microelect, Singapore 117685, Singapore

[3] Singapore Univ Technol & Design, Singapore 138682, Singapore

[4] 4700 King Abdullah Univ Sci & Technol, Imaging & Characterizat Core Lab, Thuwal 239556900, Saudi Arabia

[5] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 13期

关键词：

diffusion; electron energy loss spectra; hafnium compounds; multilayers; oxidation; random-access storage; reduction (chemical); titanium compounds; transmission electron microscopy; OXIDES;

D O I：

10.1063/1.3645623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfO(x)/TiO(x)/HfO(x)/TiO(x) multilayer structure, as a replacement for the conventional HfO(x)-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy (EELS) analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfO(x) layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfO(x) eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3645623]

引用

页数：3

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