Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOx Resistive Switching Random-Access Memory

被引：0
|
作者：
Lee, Jae Yoon [1 ]
Kim, Youngmin [1 ]
Kwon, Ikhyeon [2 ]
Cho, Il Hwan [2 ]
Lee, Jae Yeon [3 ]
Kim, Soo Gil [3 ]
Cho, Seongjae [1 ]
机构：
[1] Gachon Univ, Dept Elect Engn, Seongnam Si 13120, Gyeonggi Do, South Korea
[2] Myongji Univ, Dept Elect Engn, Yongin 17058, Gyeonggi Do, South Korea
[3] SK Hynix Inc, R&D Div, Icheon Si 17336, Gyeonggi Do, South Korea
来源：
2018 76TH DEVICE RESEARCH CONFERENCE (DRC) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：2
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