Self-assembled tin dioxide for forming-free resistive random-access memory application

被引：2

作者：

Hong, Ying-Jhan ^{[1
]}

Wang, Tsang-Hsuan ^{[1
]}

Wei, Shih-Yuan ^{[1
]}

Chang, Pin ^{[2
]}

Yew, Tri-Rung ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Bio MA Tek, Hsinchu 302, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 06期

关键词：

SWITCHING MEMORIES; NANOCROSSBAR;

D O I：

10.7567/JJAP.55.060301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel resistive switching structure, tin-doped indium oxide (ITO)/SnO2-x (defined as SnO2 with oxygen vacancies)/SnS was demonstrated with a set voltage of 0.38V, a reset voltage of -0.15V, a ratio of high resistance to low resistance of 544, and forming-free and nonlinear currentvoltage (I-V) characteristics. The interface of the ITO and the self-assembled SnO2-x contributed to the resistive switching behavior. This device showed great potential for resistive random access memory (RRAM) application and solving the sneak path problem in cross-bar memory arrays. Furthermore, a nanostructured resistive switching device was demonstrated successfully. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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