Short-channel characteristics of variable-body-factor fully-depleted silicon-on-insulator metal-oxide-semiconductor-field-effect-transistors

被引：7

作者：

Ohtou, T ^{[1
]}

Nagumo, T ^{[1
]}

Hiramoto, T ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 6A期

关键词：

body factor; body effect factor; variable-threshold-voltage CMOS (VTCMOS); silicon-on-insulator (SOI);

D O I：

10.1143/JJAP.44.3885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The short-channel characteristics of variable-body-factor fully-depleted silicon-on-insulator (FD SOI) metal-oxide-semiconductor field-effect-transistors (MOSFETs), which we previously have proposed, are investigated by two-dimensional device simulation. It is found that, although the advantages of dc characteristics diminish in the short channel regime, improved ac characteristics can be obtained by the reduction in parasitic drain capacitance. The optimization of device parameters for variable-body-factor FD SOI MOSFETs is also discussed.

引用

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页码：3885 / 3888

页数：4

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