Short-channel characteristics of variable-body-factor fully-depleted silicon-on-insulator metal-oxide-semiconductor-field-effect-transistors

被引：7

作者：

Ohtou, T ^{[1
]}

Nagumo, T ^{[1
]}

Hiramoto, T ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 6A期

关键词：

body factor; body effect factor; variable-threshold-voltage CMOS (VTCMOS); silicon-on-insulator (SOI);

D O I：

10.1143/JJAP.44.3885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The short-channel characteristics of variable-body-factor fully-depleted silicon-on-insulator (FD SOI) metal-oxide-semiconductor field-effect-transistors (MOSFETs), which we previously have proposed, are investigated by two-dimensional device simulation. It is found that, although the advantages of dc characteristics diminish in the short channel regime, improved ac characteristics can be obtained by the reduction in parasitic drain capacitance. The optimization of device parameters for variable-body-factor FD SOI MOSFETs is also discussed.

引用

下载

页码：3885 / 3888

页数：4

共 50 条

[21] Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
Yang, Yunxiang
Du, Gang
Han, Ruqi
Liu, Xiaoyan
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
[22] Complete surface-potential-based fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model for circuit simulation
Kitamaru, D., 1600, Japan Society of Applied Physics (43):
[23] Complete surface-potential-based fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model for circuit simulation
Kitamaru, D
Uetsuji, Y
Sadachika, N
Miura-Mattausch, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 2166 - 2169
[24] DETERMINATION OF FLAT-BAND VOLTAGES FOR FULLY DEPLETED SILICON-ON-INSULATOR (SOI) METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS)
LYU, JS
NAM, KS
LEE, CC
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9A): : 2678 - 2681
[25] Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors
Gilbert, M.J.
Ferry, D.K.
Journal of Applied Physics, 2004, 95 (12): : 7954 - 7960
[26] Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors
Gilbert, MJ
Ferry, DK
JOURNAL OF APPLIED PHYSICS, 2004, 95 (12) : 7954 - 7960
[27] INVESTIGATION OF FLOATING BODY EFFECTS IN SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
OUISSE, T
GHIBAUDO, G
BRINI, J
CRISTOLOVEANU, S
BOREL, G
JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) : 3912 - 3919
[28] Compact Current Modeling of Fully Depleted Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors with Doped Short-Channel
Choi, Bvung-Kil
Jeong, Min-Kyu
Kwon, Hyuck-In
Shin, Hyungcheol
Lee, Jong-Ho
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (11) : 8253 - 8260
[29] Analysis of static and dynamic performance of short-channel double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors for improved cutoff frequency
Kranti, A., 1600, Japan Society of Applied Physics (44):
[30] Analysis of static and dynamic performance of short-channel double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors for improved cutoff frequency
Kranti, A
Chung, TN
Raskin, JP
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2340 - 2346

← 1 2 3 4 5 →