Interface State Density of Atomic Layer Deposited Al2O3 on β-Ga2O3

被引：2

作者：

Su, C. Y. ^{[1
]}

Hoshii, T. ^{[1
]}

Muneta, I ^{[1
]}

Wakabayashi, H. ^{[1
]}

Tsutsui, K. ^{[2
]}

Iwai, H. ^{[2
]}

Kakushima, K. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Sch Engn, Tokyo, Japan

[2] Tokyo Inst Technol, Inst Innovat Res, Tokyo, Japan

来源：

WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 19 | 2018年 / 85卷 / 07期

关键词：

D O I：

10.1149/08507.0027ecst

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, a dielectric improvement of Al2O3 by atomic layer deposited with a thickness of 40 nm on beta-Ga2O3 was reported. The flat-band voltage shift and hysteresis can be reduced significantly by post deposition anneal (PDA) in a Al2O3/beta-Ga2O3 metal-oxide-semiconductor capacitor (MOSCAP). Also, an interface trap density (D-it) of 7 x 10(12) cm(-2)/eV(-1) was obtained at 0.2 eV from conduction band by Terman method.

引用

页码：27 / 30

页数：4

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