Interface State Density of Atomic Layer Deposited Al2O3 on β-Ga2O3

被引：2
|
作者：
Su, C. Y. [1 ]
Hoshii, T. [1 ]
Muneta, I [1 ]
Wakabayashi, H. [1 ]
Tsutsui, K. [2 ]
Iwai, H. [2 ]
Kakushima, K. [1 ]
机构：
[1] Tokyo Inst Technol, Sch Engn, Tokyo, Japan
[2] Tokyo Inst Technol, Inst Innovat Res, Tokyo, Japan
来源：
WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 19 | 2018年 / 85卷 / 07期
关键词：
D O I：
10.1149/08507.0027ecst
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, a dielectric improvement of Al2O3 by atomic layer deposited with a thickness of 40 nm on beta-Ga2O3 was reported. The flat-band voltage shift and hysteresis can be reduced significantly by post deposition anneal (PDA) in a Al2O3/beta-Ga2O3 metal-oxide-semiconductor capacitor (MOSCAP). Also, an interface trap density (D-it) of 7 x 10(12) cm(-2)/eV(-1) was obtained at 0.2 eV from conduction band by Terman method.
引用
收藏
页码：27 / 30
页数：4
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