Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3(010) and its suppressed interface state density

被引：38

作者：

Kamimura, Takafumi ^{[1
]}

Krishnamurthy, Daivasigamani ^{[1
]}

Kuramata, Akito ^{[2
]}

Yamakoshi, Shigenobu ^{[2
]}

Higashiwaki, Masataka ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[2] Tamura Corp, Sayama, Saitama 3501328, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 12期

关键词：

SINGLE-CRYSTALS; SILICON; EDGE;

D O I：

10.7567/JJAP.55.1202B5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al2O3 films were deposited on beta-Ga2O3(010) and beta-Ga2O3(201) substrates by atomic layer deposition at 250 degrees C, and their interface state densities (D-it) at shallow energies were evaluated using a high-low capacitance-voltage (C-V) method. Al2O3/beta-Ga2O3(010) showed lower D-it values (5.9 x 10(10) to 9.3 x 10(11)cm(-2)eV(-1)) than Al2O3/beta-Ga2O3(201) (2.0 x 10(11) to 2.0 x 10(12)cm(-2)eV(-1)) in an energy range of -0.8 to -0.1 eV. Cross-sectional transmission electron microscopy analysis indicated the formation of a uniform amorphous Al2O3 layer on the beta-Ga2O3(201) substrate. In contrast, a crystalline Al2O3 interlayer with a thickness of 3.2 +/- 0.7nm with an amorphous Al2O3 top layer was formed on the beta-Ga2O3(010) substrate, which effectively decreased D-it. Moreover, thicker interlayers showing lower D-it values at deep state levels were formed at deposition temperatures higher than 100 degrees C, which were evaluated by shifts in the C-V curves. (C) 2016 The Japan Society of Applied Physics

引用

页数：7

共 50 条

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