Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3

被引：46
|
作者：
Hung, Ting-Hsiang [1 ]
Sasaki, Kohei [2 ]
Kuramata, Akito [2 ]
Nath, Digbijoy N. [1 ]
Park, Pil Sung [1 ]
Polchinski, Craig [1 ]
Rajan, Siddharth [1 ]
机构：
[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
[2] Tamura Corp, Sayama, Saitama 3501328, Japan
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 16期
关键词：
SINGLE-CRYSTALS; OFFSETS; GROWTH; EDGE;
D O I：
10.1063/1.4873546
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical properties of atomic layer deposited Al2O3/beta-Ga2O3 interface were investigated. We determined the conduction band offset and interface charge density of Al2O3/beta-Ga2O3 interface by analyzing the capacitance-voltage characteristics. The conduction band offset at the Al2O3/beta-Ga2O3 interface was found to be 1.7 eV. A large positive sheet charge density of 3.6 x 10(12) cm(-2) is induced at the Al2O3/beta-Ga2O3 interface, which caused a non-zero field of 0.7MV/cm in the Al2O3 under flat-band conditions in the beta-Ga2O3. The forward current-voltage characteristics were found to be related to trap-assisted tunneling. (C) 2014 AIP Publishing LLC.
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页数：3
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