High voltage resistant ESD protection circuitry for 0.5μm CMOS OTP/EPROM programming pin

被引：0
|
作者：
Schröder, HU [1 ]
van Steenwijk, G [1 ]
Notermans, G [1 ]
机构：
[1] Philips Semicond, CH-8045 Zurich, Switzerland
来源：
ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS - 1998 | 1998年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work introduces a new high voltage resistant ESD protection circuitry for the programming pin of a non-volatile one time programmable silicided 0.5 mu m CMOS device. TLM, HEM, MM0.75 mu H ESD stress measurements of this new design resulted in a latch-up resistant protection circuitry with a ESD performance of more than 8.0kV HEM and 950V MM0.75 mu H.
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页码：96 / 103
页数：4
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