ESD protection of NDMOS in 0.18 μm high-voltage CMOS technology for automotive applications

被引：0
|
作者：
Steinbeck, L. [1 ]
Proehl, U. [1 ]
Frank, M. [2 ]
Konrad, A. [2 ]
Ellmers, C. [1 ]
Uhlig, T. [1 ]
机构：
[1] X FAB Dresden GmbH Co KG, Grenzstr 28, D-01109 Dresden, Germany
[2] X FAB Semicond Foundr AG, Erfurt, Germany
来源：
ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The snapback trigger voltage of the NDMOS in a 0.18 mu m automotive smart power technology is strongly reduced at large gate bias. This behavior of the deep-submicron multi-resurf NDMOS, which makes its ESD protection difficult and limits its electrical safe operating area, and the influence of various device modifications are investigated by TCAD simulation. SCR-based ESD protection schemes for I/O and power supply protection are presented. For supply protection the SCR is modified to increase its holding voltage. The ability to protect the NDMOS at non-zero gate bias is discussed.
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页码：221 / +
页数：2
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