Two-band k.p model for the conduction band in silicon

The modification of the silicon conduction band under uniaxial [110] stress is considered. Special attention is paid to the stress dependence of the non-parabolicity parameter. An analytical expression of the dependence of the non-parabolicity parameter on shear stress is obtained. At 3 GPa stress the non-parabolicity is shown to increase by a factor of 1.7. The stress dependence of the non-parabolicity parameter is verified by comparing the. corresponding analytical density-of-states to the numerical density-of-states obtained from the empirical pseudopotential method and good agreement, is found. The increase in the non-paxabolicity parameter increases the after-scattering density-of-states and the scattering rates, which results in all almost. 25% suppression of the mobility enhancement due to the corresponding effective mass decrease in a 3 nm Si body thin FET at 3 GPa [110] stress.