Electron subband dispersions in ultra-thin silicon films from a two-band k.p theory

被引：2
|
作者：
Sverdlov, Viktor [1 ]
Kosina, Hans [1 ]
Selberherr, Siegfried [1 ]
机构：
[1] TU Vienna, Inst Microelect, A-1040 Vienna, Austria
来源：
JOURNAL OF COMPUTATIONAL ELECTRONICS | 2008年 / 7卷 / 03期
基金：
奥地利科学基金会;
关键词：
k.p method; Device simulation; Subband structure; Quantum transport; Monte Carlo method;
D O I：
10.1007/s10825-008-0177-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electron subband structure in a thin (100) silicon film is analyzed based on a two-band k.p theory. For unprimed subbands the dependence of the nonparabolicity parameter on film thickness is obtained. The two-band k.p theory gives a thickness dependence of the effective masses for primed subbands. Limitations of the model are discussed. The importance of the nonparabolicity parameter dependence on the film thickness for transport is demonstrated.
引用
收藏
页码：164 / 167
页数：4
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