Two-band tunneling currents and stress-induced leakage in ultra-thin SiO2 films

被引：0

作者：

Okhonin, S ^{[1
]}

Ils, A ^{[1
]}

Bouvet, D ^{[1
]}

Fazan, P ^{[1
]}

Guegan, G ^{[1
]}

Deleonibus, S ^{[1
]}

Martin, F ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland

来源：

ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS | 1999年 / 567卷

关键词：

D O I：

10.1557/PROC-567-253

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The conduction band and valence band electron tunneling currents in ultra-thin SiO2 films at the transition from direct to Fowler-Nordheim tunneling regimes are studied. The slopes of the current voltage characteristics agree well with the simulations performed. The Stress-Induced Leakage Current (SILC) behavior is quite similar for both conduction and valence band currents even if the amplitude of the valence band SILC is much lower. We show that a linear dependence exists between the stress-induced interface trap density and both valence and conduction band SILC. A new model of SILC is also proposed.

引用

页码：253 / 258

页数：6

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