Electron cotunneling in a semiconductor quantum dot

被引：211
|
作者：
De Franceschi, S
Sasaki, S
Elzerman, JM
van der Wiel, WG
Tarucha, S
Kouwenhoven, LP
机构：
[1] Delft Univ Technol, Dept Appl Phys, DIMES, NL-2600 GA Delft, Netherlands
[2] Delft Univ Technol, ERATO, Mesoscop Correlat Project, NL-2600 GA Delft, Netherlands
[3] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[4] Univ Tokyo, ERATO, Mesoscop Correlat Project, Bunkyo Ku, Tokyo 1130033, Japan
来源：
PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 05期
关键词：
D O I：
10.1103/PhysRevLett.86.878
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whether they leave the dot in its ground state or drive it into an excited state, respectively. We are able to discriminate between these two contributions and show that inelastic events can occur only if the applied bias exceeds the lowest excitation energy. Implications to energy-level spectroscopy are discussed.
引用
收藏
页码：878 / 881
页数：4
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