Counting statistics of single electron transport in a semiconductor quantum dot

被引：0

作者：

Gustavsson, S. ^{[1
]}

Leturcq, R. ^{[1
]}

Simovic, B. ^{[1
]}

Schleser, R. ^{[1
]}

Ihn, T. ^{[1
]}

Studerus, P. ^{[1
]}

Ensslin, K. ^{[1
]}

Driscoll, D. C. ^{[2
]}

Gossard, A. C. ^{[2
]}

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

ADVANCES IN SOLID STATE PHYSICS 46 | 2008年 / 46卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

By using a quantum point contact as a charge detector, we show the measurement of current fluctuations in a semiconductor quantum dot by counting electrons tunneling through the system one by one. This method gives direct access to the full counting statistics of current fluctuations. In the sequential tunneling regime, we show the suppression of the noise compared to its classical Poissonian value, which is expected due to Coulomb blockade.

引用

页码：27 / 39

页数：13

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