Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate

被引：6

作者：

Nikolaev, V. I. ^{[1
,2
]}

Pechnikov, A. I. ^{[1
,2
]}

Guzilova, L. I. ^{[1
,2
]}

Chikiryaka, A. V. ^{[1
]}

Shcheglov, M. P. ^{[1
]}

Nikolaev, V. V. ^{[3
]}

Stepanov, S. I. ^{[1
,2
,3
]}

Vasil'ev, A. A. ^{[2
]}

Shchemerov, I. V. ^{[2
]}

Polyakov, A. Ya. ^{[2
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Natl Univ Sci & Technol MISiS, Moscow Inst Steel & Alloys, Moscow 119049, Russia

[3] Perfect Crystals LLC, St Petersburg 194064, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2020年 / 46卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

gallium oxide; chloride epitaxy; patterned substrates;

D O I：

10.1134/S106378502003013X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial layers of a new wide-band semiconductor (alpha-Ga2O3 doped with tin) have been grown by chloride epitaxy on smooth and patterned substrates, which are widely used to increase the emission yield in high-efficiency LED structures based on InGaN, and studied. The properties of the obtained gallium-oxide layers have been compared. Both types of samples had n-type conductivity, but the frequency and voltage dependences of their capacitance differed. Differences in the dislocation structure of epitaxial alpha-Ga2O3 layers on smooth and patterned substrates have been identified by X-ray diffractometry.

引用

页码：228 / 230

页数：3

共 50 条

[21] Crack-free thick (∼5 μm) α-Ga2O3 films on sapphire substrates with α-(Al,Ga)2O3 buffer layers
Oda, Masaya
Kaneko, Kentaro
Fujita, Shizuo
Hitora, Toshimi
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)
[22] Investigation and Comparison of the Performance for β-Ga2O3 Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate
Yan, Zuyong
Li, Shan
Liu, Zeng
Yue, Jianying
Ji, Xueqiang
Wang, Jinjin
Hou, Shanglin
Wu, Gang
Lei, Jingli
Sun, Guobin
Li, Peigang
Tang, Weihua
[J]. CRYSTALS, 2024, 14 (07)
[23] Effect of Oxygen on the Electrical Conductivity of Pt-Contacted α-Ga2O3/ε(κ)-Ga2O3 MSM Structures on Patterned Sapphire Substrates
Yakovlev, Nikita N.
Nikolaev, Vladimir I.
Stepanov, Sergey I.
Almaev, Aleksei V.
Pechnikov, Aleksei I.
Chernikov, Evgeny V.
Kushnarev, Bogdan O.
[J]. IEEE SENSORS JOURNAL, 2021, 21 (13) : 14636 - 14644
[24] Deposition of β-Ga2O3 layers by sublimation on sapphire substrates of different orientations
V. N. Maslov
V. I. Nikolaev
V. M. Krymov
V. E. Bugrov
A. E. Romanov
[J]. Physics of the Solid State, 2015, 57 : 1342 - 1346
[25] Deposition of β-Ga2O3 layers by sublimation on sapphire substrates of different orientations
Maslov, V. N.
Nikolaev, V. I.
Krymov, V. M.
Bugrov, V. E.
Romanov, A. E.
[J]. PHYSICS OF THE SOLID STATE, 2015, 57 (07) : 1342 - 1346
[26] Growth of β-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template
Jiao T.
Li Z.-M.
Wang Q.
Dong X.
Zhang Y.-T.
Bai S.
Zhang B.-L.
Du G.-T.
[J]. Faguang Xuebao/Chinese Journal of Luminescence, 2020, 41 (03): : 281 - 287
[27] Controlled lateral epitaxial growth in vertical β-Ga2O3 nanowires on sapphire by MOCVD
Ma, Yongjian
Zhang, Xiaodong
Li, Junshuai
Cao, Xu
He, Tao
Zhang, Li
Tang, Wenbo
Xu, Kun
Fan, Yaming
Cai, Yong
Fu, Houqiang
Zhang, Baoshun
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (30)
[28] Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates
Polyakov, A. Y.
Nikolaev, V. I.
Pechnikov, A. I.
Stepanov, S. I.
Yakimov, E. B.
Scheglov, M. P.
Shchemerov, I. V.
Vasilev, A. A.
Kochkova, A. A.
Chernykh, A. V.
Chikiryaka, A. V.
Pearton, S. J.
[J]. APL MATERIALS, 2022, 10 (06):
[29] The Heteroepitaxy of Thick β-Ga2O3 Film on Sapphire Substrate with a β-(AlxGa1-x)2O3 Intermediate Buffer Layer
Zhang, Wenhui
Zhang, Hezhi
Zhang, Song
Wang, Zishi
Liu, Litao
Zhang, Qi
Hu, Xibing
Liang, Hongwei
[J]. MATERIALS, 2023, 16 (07)
[30] Semiconductor properties of thin and thick film Ga2O3 ceramic layers
Feltz, A
Gamsjäger, E
[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1998, 18 (14) : 2217 - 2226

← 1 2 3 4 5 →