Growth of β-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template

被引：0
|
作者：
Jiao, Teng [1 ]
Li, Ze-Ming [1 ]
Wang, Qian [2 ]
Dong, Xin [1 ]
Zhang, Yuan-Tao [1 ]
Bai, Song [2 ]
Zhang, Bao-Lin [1 ]
Du, Guo-Tong [1 ]
机构：
[1] State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun,130012, China
[2] State Key Laboratory of Wide-bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, Nanjing,210016, China
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2020年 / 41卷 / 03期
基金：
中国国家自然科学基金;
关键词：
A3. metal organic chemical vapor deposition (MOCVD) - Experimental conditions - Field emission scanning electron microscopes - Gallium oxides - Large lattice mismatch - Metal organic - Sapphire substrates - Thermal oxidation;
D O I：
10.3788/fgxb20204103.0281
中图分类号：
学科分类号：
摘要：
35
引用
收藏
页码：281 / 287
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