Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate

被引：6
|
作者：
Nikolaev, V. I. [1 ,2 ]
Pechnikov, A. I. [1 ,2 ]
Guzilova, L. I. [1 ,2 ]
Chikiryaka, A. V. [1 ]
Shcheglov, M. P. [1 ]
Nikolaev, V. V. [3 ]
Stepanov, S. I. [1 ,2 ,3 ]
Vasil'ev, A. A. [2 ]
Shchemerov, I. V. [2 ]
Polyakov, A. Ya. [2 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Natl Univ Sci & Technol MISiS, Moscow Inst Steel & Alloys, Moscow 119049, Russia
[3] Perfect Crystals LLC, St Petersburg 194064, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2020年 / 46卷 / 03期
基金：
俄罗斯科学基金会;
关键词：
gallium oxide; chloride epitaxy; patterned substrates;
D O I：
10.1134/S106378502003013X
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial layers of a new wide-band semiconductor (alpha-Ga2O3 doped with tin) have been grown by chloride epitaxy on smooth and patterned substrates, which are widely used to increase the emission yield in high-efficiency LED structures based on InGaN, and studied. The properties of the obtained gallium-oxide layers have been compared. Both types of samples had n-type conductivity, but the frequency and voltage dependences of their capacitance differed. Differences in the dislocation structure of epitaxial alpha-Ga2O3 layers on smooth and patterned substrates have been identified by X-ray diffractometry.
引用
收藏
页码：228 / 230
页数：3
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