Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors

被引：5
|
作者：
Rupani, R. A. [1 ]
Ghosh, S. [1 ]
Su, X. [2 ]
Bhattacharya, P. [2 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 3-4期
关键词：
l/f noise; quantum dots; infrared detectors; resonant tunneling;
D O I：
10.1016/j.mejo.2007.07.108
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the temperature dependence of low-frequency noise in InAs-GaAs resonant tunneling quantum dot infrared photodetectors (T-QDIPs). The noise in these devices has been investigated in the temperature range of 78-300 K. The noise spectrum showed a weak Lorentzian component superimposed upon the l/f(gamma) spectrum. The change in the cut-off frequency of the Lorentzian was analyzed as a function of temperature. The activation energy of the trap associated with this Lorentzian was obtained as 0.155 eV, which is in good agreement with the energy of the lowest energy state in the quantum dot. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：307 / 313
页数：7
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