Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors

被引：5

作者：

Rupani, R. A. ^{[1
]}

Ghosh, S. ^{[1
]}

Su, X. ^{[2
]}

Bhattacharya, P. ^{[2
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 3-4期

关键词：

l/f noise; quantum dots; infrared detectors; resonant tunneling;

D O I：

10.1016/j.mejo.2007.07.108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the temperature dependence of low-frequency noise in InAs-GaAs resonant tunneling quantum dot infrared photodetectors (T-QDIPs). The noise in these devices has been investigated in the temperature range of 78-300 K. The noise spectrum showed a weak Lorentzian component superimposed upon the l/f(gamma) spectrum. The change in the cut-off frequency of the Lorentzian was analyzed as a function of temperature. The activation energy of the trap associated with this Lorentzian was obtained as 0.155 eV, which is in good agreement with the energy of the lowest energy state in the quantum dot. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：307 / 313

页数：7

共 50 条

[31] Photoconductivity Resonance Tunneling Spectroscopy of the Electron States in the InAs/GaAs Quantum Dot Heterostructures
Ivina, N. L.
Orlov, M. L.
Volkova, N. S.
INTERNATIONAL JOURNAL OF NANOSCIENCE, 2019, 18 (3-4)
[32] Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
Wu, Jiang
Jiang, Qi
Chen, Siming
Tang, Mingchu
Mazur, Yuriy I.
Maidaniuk, Yurii
Benamara, Mourad
Semtsiv, Mykhaylo P.
Masselink, W. Ted
Sablon, Kimberly A.
Salamo, Gregory J.
Liu, Huiyun
ACS PHOTONICS, 2016, 3 (05): : 749 - 753
[33] Doping Effect on Carrier Occupation and Transport in InAs/GaAs Quantum Dot Infrared Photodetectors: A Capacitance-Voltage Spectroscopy Study
Zhao, Zhiya
Lantz, Kevin R.
Yi, Changhyun
Stiff-Roberts, Adrienne D.
2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, 2007, : 2003 - 2004
[34] SEMICONDUCTOR QUANTUM DOT RESONANT TUNNELING SPECTROSCOPY
REED, MA
RANDALL, JN
LUSCOMBE, JH
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B12 - B14
[35] Surface photovoltage spectroscopy study of InAs quantum dot in quantum well multilayer structures for infrared photodetectors
Donchev, V.
Ivanov, Ts
Ivanova, Ts
Mathews, S.
Kim, J. O.
Krishna, S.
SUPERLATTICES AND MICROSTRUCTURES, 2015, 88 : 711 - 722
[36] Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors
Ivanov, Ts
Donchev, V.
Germanova, K.
Tellaleva, Ts
Borissov, K.
Hongpinyo, V.
Vines, P.
David, J. P. R.
Ooi, B. S.
17TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON, AND ION TECHNOLOGIES (VEIT 2011), 2012, 356
[37] InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD
Zhang, W
Lim, H
Tsao, S
Mi, K
Movaghar, B
Sills, T
Jiang, J
Razeghi, M
INFRARED SPACEBORNE REMOTE SENSING XII, 2004, 5543 : 22 - 30
[38] InAs/InGaAs/InP structures for quantum dot infrared photodetectors
Landi, SM
Pires, MP
Tribuzy, CVB
Souza, PL
Marega, E
Silva, AG
Guimaraes, PSS
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 8, 2005, 2 (08): : 3171 - 3174
[39] Effect of InAs dots on noise of quantum dot resonant tunneling single-photon detectors
Hees, S. S.
Kardynal, B. E.
See, P.
Shields, A. J.
Farrer, I.
Ritchie, D. A.
APPLIED PHYSICS LETTERS, 2006, 89 (15)
[40] Scanning tunneling spectroscopy of cleaved InAs/GaAs quantum dots at low temperatures
Urbieta, A.
Grandidier, B.
Nys, J. P.
Deresmes, D.
Stievenard, D.
Lemaitre, A.
Patriarche, G.
Niquet, Y. M.
PHYSICAL REVIEW B, 2008, 77 (15):

← 1 2 3 4 5 →