High detectivity InAs quantum dot infrared photodetectors

被引：199
|
作者：
Kim, ET [1 ]
Madhukar, A
Ye, ZM
Campbell, JC
机构：
[1] Univ So Calif, Nanostruct Mat & Devices Lab, Dept Mat Sci, Los Angeles, CA 90089 USA
[2] Univ So Calif, Nanostruct Mat & Devices Lab, Dept Phys, Los Angeles, CA 90089 USA
[3] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 17期
关键词：
D O I：
10.1063/1.1719259
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a high detectivity of 3x10(11) cm Hz(1/2)/W at 78 K for normal-incidence quantum dot infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active regions. The high detectivity seen at 1.4 V corresponds to photoresponse peaks at 9.3 and 8.7 mum for positive and negative bias, respectively. (C) 2004 American Institute of Physics.
引用
收藏
页码：3277 / 3279
页数：3
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