Modeling of ultrahighly doped shallow junctions for aggressively scaled CMOS

被引：0

作者：

Kennel, HW ^{[1
]}

Cea, SM ^{[1
]}

Lilak, AD ^{[1
]}

Keys, PH ^{[1
]}

Giles, MD ^{[1
]}

Hwang, J ^{[1
]}

Sandford, JS ^{[1
]}

Corcoran, S ^{[1
]}

机构：

[1] Intel Corp, TCAD Div, Hillsboro, OR 97124 USA

来源：

INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST | 2002年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents an integrated modeling approach to address diffusion and activation challenges in sub-90 nm CMOS technology. Co-implants of F and Ge are shown to reduce diffusion rates and a new model for the interactive effects is presented. Complex codiffusion behavior of As and P is presented and modeling concepts elucidated. Tradeoffs such as sheet resistance for a given junction depth, and how these depend on impurities, as well as soak vs. spike rapid thermal anneals (RTA), can be understood with simulation models.

引用

页码：875 / 878

页数：4

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