Possibility of SOI Based Super Steep Subthreshold Slope MOSFET for Ultra Low Voltage Application

被引：0
|
作者：
Mori, Takayuki [1 ]
Ida, Jiro [1 ]
机构：
[1] Kanazawa Inst Technol, Dept Elect & Elect Engn, Kanazawa, Ishikawa, Japan
来源：
2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2013年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：2
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