Possibility of SOI Based Super Steep Subthreshold Slope MOSFET for Ultra Low Voltage Application

被引：0
|
作者：
Mori, Takayuki [1 ]
Ida, Jiro [1 ]
机构：
[1] Kanazawa Inst Technol, Dept Elect & Elect Engn, Kanazawa, Ishikawa, Japan
来源：
2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
相关论文
共 50 条
  • [21] Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications
    Mori, Takayuki
    Ida, Jiro
    Momose, Shun
    Itoh, Kenji
    Ishibashi, Koichiro
    Arai, Yasuo
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01): : 565 - 570
  • [22] First Experimental Confirmation of Ultralow Voltage Rectification by Super Steep Subthreshold Slope "PN-Body Tied SOI-FET" for High Efficiency RF Energy Harvesting and Ultralow Voltage Sensing
    Momose, Shun
    Ida, Jiro
    Yamada, Takuya
    Mori, Takayuki
    Itoh, Kenji
    Ishibashi, Koichiro
    Arai, Yasuo
    2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2018,
  • [23] Low-Voltage Organic Single-Crystal Field-Effect Transistor with Steep Subthreshold Slope
    Yang, Fangxu
    Sun, Lingjie
    Han, Jiangli
    Li, Baili
    Yu, Xi
    Zhang, Xiaotao
    Ren, Xiaochen
    Hu, Wenping
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (31) : 25871 - 25877
  • [24] Transient Characteristics on Super-Steep Subthreshold Slope "PN-Body Tied SOI-FET" -Simulation and Pulse Measurement-
    Mori, Takayuki
    Ida, Jiro
    Endo, Hiroki
    IEICE TRANSACTIONS ON ELECTRONICS, 2020, E103C (10) : 533 - 542
  • [25] Tunnel MOSFET with Partial Channel Underlap Exhibiting Low Subthreshold Slope
    Zhang, Wen-Hao
    Li, Zun-Cao
    Guan, Yun-He
    Xiong, Qi
    Zheng, Chuang
    2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, : 1245 - 1247
  • [26] Utility of High On-off ratio, High Off Resistance Rewritable Device to EEPROM for Ultra-low Voltage Operation of Steep Subthreshold Slope FETs
    Ogasahara, Yasuhiro
    Ma, Chao
    Hioki, Masakazu
    Nakagawa, Tadashi
    Sekigawa, Toshihiro
    Tsutsumi, Toshiyuki
    Koike, Hanpei
    Tada, Munehiro
    Sakamoto, Toshitsugu
    2014 IEEE 6TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2014,
  • [27] A 'Self-Body-Biased' SOI MOSFET: A novel body-voltage-controlled SOI MOSFET for low voltage applications
    Terauchi, M
    Funakoshi, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4B): : 2014 - 2019
  • [28] A 'self-body-biased' SOI MOSFET: A novel body-voltage-controlled SOI MOSFET for low voltage applications
    Terauchi, M., 2014, Japan Society of Applied Physics (42):
  • [29] Super Steep Subthreshold Slope "PN-Body-Tied SOI-FET" for Ultralow Power IoT Edge Systems and RF Energy Harvesting
    Ida, Jiro
    Mori, Takayuki
    Momose, Shun
    PROCEEDINGS OF 2019 3RD INTERNATIONAL CONFERENCE ON RECENT ADVANCES IN SIGNAL PROCESSING, TELECOMMUNICATIONS & COMPUTING (SIGTELCOM 2019), 2019, : 74 - 76
  • [30] Ultra-low voltage high-speed Schmitt trigger circuit in SOI MOSFET technology
    Kim, Kyung Ki
    Kim, Yong-Bin
    IEICE ELECTRONICS EXPRESS, 2007, 4 (19): : 606 - 611
12345