Growth and photoluminescence study of aluminium doped SiC epitaxial layers

被引：2
|
作者：
Pedersen, H. [1 ]
Henry, A. [1 ]
Hassan, J. [1 ]
Bergman, J. P. [1 ]
Janzen, E. [1 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
来源：
Silicon Carbide and Related Materials 2006 | 2007年 / 556-557卷
关键词：
CVD epitaxial layers; aluminium; photoluminescence;
D O I：
10.4028/www.scientific.net/MSF.556-557.97
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Epitaxial layers were grown in a horizontal hot-wall CVD reactor and intentionally doped with aluminium in a wide concentration range by varying the flow of aluminiurn into the reactor. The layers were grown on 4H and 6H SiC substrates on both Si and C face. Low temperature photoluminescence (LTPL) has been used to characterize the layers; 6H-SiC show differences in the structure of the Al bound-exciton (Al-BE) between the two faces,, suggesting that the site preference is face dependent. From the LTPL spectra the Al concentration in the layers can be estimated.
引用
收藏
页码：97 / 100
页数：4
相关论文
共 50 条
  • [31] SPECTRAL SHIFT OF PHOTOLUMINESCENCE OF HIGHLY DOPED GaAs EPITAXIAL LAYERS GROWN BY MOCVD.
    Okamoto, Kotaro
    Kurihara, Nobuaki
    [J]. Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (11): : 1763 - 1766
  • [32] Photoluminescence of Zn- and Si-doped GaAs epitaxial layers grown by MOCVD
    Hudait, MK
    Modak, P
    Hardikar, S
    Rao, KSRK
    Krupanidhi, SB
    [J]. PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 312 - 316
  • [33] Photoluminescence of phosphorus doped SiC
    Henry, Anne
    Janzen, Erik
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 589 - +
  • [34] Photoluminescence study of CVD layers highly doped with nitrogen
    Forsberg, U.
    Henry, A.
    Linnarsson, M.K.
    Janzén, E.
    [J]. Materials Science Forum, 2000, 338
  • [35] Photoluminescence study of CVD layers highly doped with nitrogen
    Forsberg, U
    Henry, A
    Linnarsson, MK
    Janzén, E
    [J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 619 - 622
  • [36] EPITAXIAL-GROWTH OF UNINTENTIONALLY P-TYPE DOPED BETA-SIC SINGLE-CRYSTAL LAYERS
    WEBER, T
    JUST, W
    MULHOFF, L
    SCHOLZ, C
    STEINBERGER, H
    [J]. DIAMOND AND RELATED MATERIALS, 1992, 1 (2-4) : 147 - 150
  • [37] Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport
    Carole, D.
    Vo-Ha, A.
    Thomas, A.
    Lazar, M.
    Thierry-Jebali, N.
    Tournier, D.
    Cauwet, F.
    Souliere, V.
    Brylinski, C.
    Brosselard, P.
    Planson, D.
    Ferro, G.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 177 - +
  • [38] Growth and study of thick 3C-SiC epitaxial layers produced by epitaxy on 6H-SiC substrates
    Lebedev, A. A.
    Zelenin, V. V.
    Abramov, P. L.
    Bogdanova, E. V.
    Lebedev, S. P.
    Nel'son, D. K.
    Razbirin, B. S.
    Scheglov, M. P.
    Tregubova, A. S.
    Syvajarvi, M.
    Yakimova, R.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 175 - +
  • [39] Growth mechanism and polytypism of SiC epitaxial layers: Color cathodoluminescence-scanning electron microscope study
    Mokhov, EN
    Saparin, GV
    Obyden, SK
    [J]. SCANNING, 1999, 21 (02) : 160 - 161
  • [40] Epitaxial growth and characterisation of phosphorus doped SiC using TBP as precursor
    Henry, A
    Janzén, E
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 101 - 104
12345