Growth mechanism and polytypism of SiC epitaxial layers: Color cathodoluminescence-scanning electron microscope study

被引：0
|
作者：
Mokhov, EN [1 ]
Saparin, GV
Obyden, SK
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 196140, Russia
[2] Moscow State Univ, Dept Phys, Moscow, Russia
来源：
SCANNING | 1999年 / 21卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：160 / 161
页数：2
相关论文
共 50 条
  • [1] Color cathodoluminescence-scanning electron microscopy study of the 4H- SiC heteroepitaxial layers grown by sublimation 'sandwich method'
    Mokhov, E.N.
    Roenkov, A.D.
    Saparin, G.V.
    Obyden, S.K.
    [J]. 1996, Found Adv Med Sci Inc, Mahwah, NJ, United States (18)
  • [2] Color cathodoluminescence-scanning electron microscopy study of the 4H-SiC heteroepitaxial layers grown by sublimation ''sandwich method''
    Mokhov, EN
    Roenkov, AD
    Saparin, GV
    Obyden, SK
    [J]. SCANNING, 1996, 18 (02) : 67 - 71
  • [3] Study of luminescent centers annealing in wide bandgap semiconductors: Color cathodoluminescence-scanning electron microscopy
    Mokhov, EN
    Roenkov, AD
    Saparin, GV
    Obyden, SK
    [J]. SCANNING, 1998, 20 (07) : 491 - 494
  • [4] Cathodoluminescence studies of InGaN/GaN layers in the scanning electron microscope
    Bewick, A
    Henley, SJ
    Cherns, D
    [J]. ELECTRON MICROSCOPY AND ANALYSIS 1999, 1999, (161): : 581 - 584
  • [5] Color cathodoluminescence display in the scanning electron microscope of deep relief surfaces
    Obyden, SK
    Ivannikov, PV
    Saparin, GV
    [J]. SCANNING, 1997, 19 (08) : 533 - 540
  • [6] ELECTRON-MICROSCOPE METHOD TO STUDY GROWTH SURFACE OF EPITAXIAL LAYERS
    KRASILNIKOVA, LM
    IVONIN, IV
    MASARNOVSKII, LV
    SYSOEVA, LN
    YAKUBENYA, MP
    [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1975, (08): : 19 - &
  • [7] POLYTYPE TRANSFORMATIONS IN SIC-EPITAXIAL LAYERS - THE COLOR CATHODOLUMINESCENCE-SEM STUDIES
    SAPARIN, GV
    OBYDEN, SK
    MOKHOV, EN
    ROENKOV, AD
    AHMEDOV, BA
    [J]. SCANNING, 1994, 16 (01) : 21 - 25
  • [8] Real color cathodoluminescence scanning electron microscopy - A new effectivemethod for study of SiC materials and devices
    Physical Faculty, Moscow StateUniversity, Moscow, Russia
    [J]. SCANNING, 2 (25-34):
  • [9] Real color cathodoluminescence scanning electron microscopy - A new effective method for study of SiC materials and devices
    Saparin, GV
    Mokhov, EN
    Obyden, SK
    Roenkov, AD
    [J]. SCANNING, 1996, 18 (01) : 25 - 34
  • [10] Electron-beam-induced conductivity and color cathodoluminescence of natural diamond plates in scanning electron microscope
    P. V. Ivannikov
    N. S. Chekalin
    P. A. Miroshnikov
    G. V. Saparin
    A. A. Altukhov
    A. V. Shustrov
    [J]. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2007, 1 : 386 - 393
12345