Growth and photoluminescence study of aluminium doped SiC epitaxial layers

被引：2

作者：

Pedersen, H. ^{[1
]}

Henry, A. ^{[1
]}

Hassan, J. ^{[1
]}

Bergman, J. P. ^{[1
]}

Janzen, E. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

来源：

Silicon Carbide and Related Materials 2006 | 2007年 / 556-557卷

关键词：

CVD epitaxial layers; aluminium; photoluminescence;

D O I：

10.4028/www.scientific.net/MSF.556-557.97

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Epitaxial layers were grown in a horizontal hot-wall CVD reactor and intentionally doped with aluminium in a wide concentration range by varying the flow of aluminiurn into the reactor. The layers were grown on 4H and 6H SiC substrates on both Si and C face. Low temperature photoluminescence (LTPL) has been used to characterize the layers; 6H-SiC show differences in the structure of the Al bound-exciton (Al-BE) between the two faces,, suggesting that the site preference is face dependent. From the LTPL spectra the Al concentration in the layers can be estimated.

引用

页码：97 / 100

页数：4

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