GROWTH AND MORPHOLOGY OF 6H-SIC EPITAXIAL LAYERS BY CVD

被引：43
|
作者：
NISHINO, S
MATSUNAMI, H
TANAKA, T
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1978年 / 45卷 / 01期
关键词：
D O I：
10.1016/0022-0248(78)90426-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：144 / 149
页数：6
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