Microhardness of 6H-SiC epitaxial layers grown by sublimation

被引：0
|
作者：
Kakanakova-Georgieva, A
Trifonova, EP
Yakimova, R
MacMillan, MF
Janzén, E
机构：
[1] Univ Sofia, Fac Phys, BU-1126 Sofia, Bulgaria
[2] Linkoping Univ, IFM, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1999年 / 34卷 / 08期
关键词：
silicon carbide; epitaxial layers; sublimation growth; microhardness;
D O I：
10.1002/(SICI)1521-4079(199909)34:8<943::AID-CRAT943>3.0.CO;2-O
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Knoop microhardness of 6H-SiC layers grown by sublimation epitaxy was investigated. The microhardness-load curves for all of the samples were measured and then used to extract the load-independent microhardness values. The relationships of these values to the growth time and growth rate were studied. The microhardness-depth profiles indicated that the layer/substrate interface region had a microhardness value that differed significantly from that of both the epi-layer and the substrate.
引用
收藏
页码：943 / 947
页数：5
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