Growth and photoluminescence study of aluminium doped SiC epitaxial layers

被引：2

作者：

Pedersen, H. ^{[1
]}

Henry, A. ^{[1
]}

Hassan, J. ^{[1
]}

Bergman, J. P. ^{[1
]}

Janzen, E. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

来源：

Silicon Carbide and Related Materials 2006 | 2007年 / 556-557卷

关键词：

CVD epitaxial layers; aluminium; photoluminescence;

D O I：

10.4028/www.scientific.net/MSF.556-557.97

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Epitaxial layers were grown in a horizontal hot-wall CVD reactor and intentionally doped with aluminium in a wide concentration range by varying the flow of aluminiurn into the reactor. The layers were grown on 4H and 6H SiC substrates on both Si and C face. Low temperature photoluminescence (LTPL) has been used to characterize the layers; 6H-SiC show differences in the structure of the Al bound-exciton (Al-BE) between the two faces,, suggesting that the site preference is face dependent. From the LTPL spectra the Al concentration in the layers can be estimated.

引用

页码：97 / 100

页数：4

共 50 条

[1] Growth of δ-doped SiC epitaxial layers
Karlsson, S
Adås, C
Konstantinov, A
Linnarsson, MK
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 563 - 566
[2] Epitaxial growth and properties of SiC layers grown on α-SiC(0001) by solid-source MBE:: A photoluminescence study
Fissel, A
Richter, W
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 409 - 412
[3] Epitaxial growth and properties of SiC layers grown on α-SiC(0001) by solid-source MBE: a photoluminescence study
Fissel, A.
Richter, W.
2001, Trans Tech Publ, Uetikon-Zuerich (353-356)
[4] ALUMINUM-DOPED EPITAXIAL SIC LAYERS
TAIROV, YM
TSVETKOV, VF
INORGANIC MATERIALS, 1978, 14 (10) : 1387 - 1391
[5] Photoluminescence of Si-doped GaAs epitaxial layers
N. G. Yaremenko
M. V. Karachevtseva
V. A. Strakhov
G. B. Galiev
V. G. Mokerov
Semiconductors, 2008, 42 : 1480 - 1486
[6] Photoluminescence of Si-doped GaAs epitaxial layers
Yaremenko, N. G.
Karachevtseva, M. V.
Strakhov, V. A.
Galiev, G. B.
Mokerov, V. G.
SEMICONDUCTORS, 2008, 42 (13) : 1480 - 1486
[7] PHOTOLUMINESCENCE PROPERTIES OF EPITAXIAL LAYERS ON HIGHLY DOPED SILICON SUBSTRATES
SCHRAMM, G
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 129 (01): : K5 - K10
[8] PHOTOLUMINESCENCE OF GAAS EPITAXIAL LAYERS DOPED WITH BOTH SULFUR AND TIN
OBORINA, EI
MELEV, VG
POROKHOVNICHENKO, LP
RAMAZANOV, PE
INORGANIC MATERIALS, 1986, 22 (01) : 1 - 4
[9] PHOTOLUMINESCENCE SPECTRA OF SN DOPED GAAS EPITAXIAL LAYERS - INFLUENCE OF EPITAXIAL PROCESS PARAMETERS
LANGMANN, U
KONIG, U
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1067 - 1072
[10] GROWTH OF HEAVILY DOPED SIC LAYERS ON SIC SINGLE CRYSTALS
NIEMYSKI, T
WEYDMAN, Z
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : C107 - &

← 1 2 3 4 5 →