Atomic and electronic structure of ferroelectric La-doped HfO2 films

被引：22

作者：

Perevalov, T., V ^{[1
,2
]}

Gutakovskii, A. K. ^{[1
]}

Kruchinin, V. N. ^{[1
]}

Gritsenko, V. A. ^{[1
,2
,3
]}

Prosvirin, I. P. ^{[4
]}

机构：

[1] Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentiev Ave, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, 2 Pirogov Str, Novosibirsk 630090, Russia

[3] Novosibirsk State Tech Univ, 20 K Marx Ave, Novosibirsk 630073, Russia

[4] Boreskov Inst Catalysis SB RAS, 5 Lavrentiev Ave, Novosibirsk 630090, Russia

来源：

MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

hafnium oxide; photoelectron spectra; HRTEM; specroellipsometry; DFT; oxygen vacancy; FRAM; THIN-FILMS; OXIDE; HAFNIA;

D O I：

10.1088/2053-1591/aaf436

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The atomic structure and optical properties of ferroelectric La-doped hafnium oxide (La:HfO2) thin films grown by the plasma-assisted atomic layer deposition were investigated. Using high resolution transmission electron microscopy, it was shown that the studied La:HfO2 film has a orthorhombic polar structure with the Pmn2(1) space group. It was found that the film exhibits ferroelectric properties. By means of x-ray photoelectron spectroscopy and specroellipsometry it was established that La:HfO2 consists of the HfO2 and La2O3 phases mixture. The specroellipsometry analysis with the Bruggeman effective medium approximation showed that the investigated La:HfO2 consists of 88% HfO2 and 12% La2O3. It is shown that etching La:HfO2 with argon ions leads to the oxygen vacancies generation in the near-surface region. These vacancies are generated mainly due to the knocking out of oxygen atoms to the interstitial positions, and the following annealing at 700 degrees C in vacuum for 1 h leads to the annihilation of that Frenkel defects.

引用

页数：7

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