Atomic Layer Deposition of HfO2 Films on Ge

被引：0

作者：

Cho, Young Joon ^{[1
]}

Chang, Hyo Sik ^{[1
]}

机构：

[1] Chungnam Natl Univ, Grad Sch Green Energy Technol, Daejeon 305764, South Korea

来源：

APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY | 2014年 / 23卷 / 01期

关键词：

Atomic layer deposition; HfO2; Ge; GeO; Growth; Annealing;

D O I：

10.5757/ASCT.2014.23.1.40

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the growth characteristics and interfacial properties of HfO2 films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of HfO2 grown on a GeO2/Ge substrate through ALD is similar to that grown on an SiO2/Si substrate. However, the incubation period of HfO2 deposition on Ge is shorter than that on Si. The HfO2 grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at 700 degrees C. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.

引用

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页码：40 / 43

页数：4

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