Ion Implantation Synthesis of Si-doped HfO2 Ferroelectric Thin Films

被引：0
|
作者：
Migita, Shinji [1 ]
Ota, Hiroyuki [1 ]
Yamada, Hiroyuki [1 ]
Shibuya, Keisuke [1 ]
Sawa, Akihito [1 ]
Matsukawa, Takashi [1 ]
Toriumi, A. [2 ]
机构：
[1] AIST, Tokyo, Japan
[2] Univ Tokyo, Tokyo, Japan
来源：
2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018) | 2018年
关键词：
Ferroelectrics; HfO2; Ion implantation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ion implantation technique is applied for the synthesize of ferroelectric HfO2 films. Si ions are implanted into amorphous HfO2 films, then crystallized by annealing. It is found that crystal structures and ferroelectric properties prepared by ion implantation are similar with those prepared by co-deposition of HfO2 and SiO2. Ion implantation technique is advantageous for the control of low concentration metal composition in ultrathin films and formation of ferroelectric phase in selected area.
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收藏
页码：44 / 46
页数：3
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