Strained GaAsP photocathode with GaAs quantum well

被引：0

作者：

Yashin, Y ^{[1
]}

Mamaev, Y ^{[1
]}

Rochansky, A ^{[1
]}

Vinokurov, D ^{[1
]}

机构：

[1] State Polytech Univ, St Petersburg 195251, Russia

来源：

SPIN 2002 | 2003年 / 675卷

关键词：

D O I：

暂无

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

By varying of the phosphorous contents "x" and "y" at the GaAs1-xPx/GaAs1-yPy cathodes they can be tuned to the wavelength, corresponding to maximum light power of the certain accelerator laser system. The parameters of strained GaAsP sample have been modified to enhance the quantum yield value at polarization maximum. The modification consisted of the incorporation of heavily doped thin GaAs quantum well layer at the top part of the structure. At the polarization maximum the yield enhancement of up to ten times has been achieved.

引用

页码：1006 / 1010

页数：5

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