Silicon-Based 850 nm GaAs/GaAsP-Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers

A silicon-based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstrate on Si is reduced to 1.8 x 107 cm-2. The metal-organic chemical vapor deposition-grown laser structure with GaAs/GaAsP QW and InAlAs active region dislocation blocking layer are fabricated into broad-stripe Fabry-Perot laser diodes. A typical threshold current and threshold current density of 286 mA and 715 Acm-2 are obtained with 2 mm cavity length and 20 um stripe width samples. A 94.2 mW single-facet output power lasing around 854 nm and a 0.314 WA-1 slope efficiency is measured under RT CW operation. After a 10-min aging process, the tested laser can operate stably under continuous operation conditions at RT and the lifetime can be approximated using an exponential fitting curve, indicating a good life reliability of this QW laser. An 850 nm room temperature continuous wave emitting silicon-based quantum well (QW) laser is reported in this article. Benefiting from the interaction of the GaAs/GaAsP-strained QW and InAlAs active region dislocation blocking layer, the threading dislocation penetration to the QW region is blocked. The laser exhibits a 94.2 mW output power, a 715 Acm-2 threshold current density, and enhanced reliability.image (c) 2024 WILEY-VCH GmbH