Strained GaAsP photocathode with GaAs quantum well

被引：0
|
作者：
Yashin, Y [1 ]
Mamaev, Y [1 ]
Rochansky, A [1 ]
Vinokurov, D [1 ]
机构：
[1] State Polytech Univ, St Petersburg 195251, Russia
来源：
SPIN 2002 | 2003年 / 675卷
关键词：
D O I：
暂无
中图分类号：
O57 [原子核物理学、高能物理学];
学科分类号：
070202 ;
摘要：
By varying of the phosphorous contents "x" and "y" at the GaAs1-xPx/GaAs1-yPy cathodes they can be tuned to the wavelength, corresponding to maximum light power of the certain accelerator laser system. The parameters of strained GaAsP sample have been modified to enhance the quantum yield value at polarization maximum. The modification consisted of the incorporation of heavily doped thin GaAs quantum well layer at the top part of the structure. At the polarization maximum the yield enhancement of up to ten times has been achieved.
引用
收藏
页码：1006 / 1010
页数：5
相关论文
共 50 条
  • [31] Growth of compressive strained in GaAs/GaAs multiple quantum well structures by MBE
    Sanjeev, S
    Vaya, PR
    Chua, SJ
    Shen, Y
    OConnor, J
    King, VB
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1997, 35 (07) : 448 - 451
  • [32] Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source
    Biswas, Jyoti
    Cultrera, Luca
    Liu, Wei
    Wang, Erdong
    Skaritka, John
    Kisslinger, Kim
    Hawkins, S. D.
    Lee, S. R.
    Klem, J. F.
    AIP ADVANCES, 2023, 13 (08)
  • [33] Electronic properties of strained GaAsSb/GaAs quantum well lasers
    Park, SH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 43 (06) : 1020 - 1025
  • [34] Nuclear spin coherence time in a strained GaAs quantum well
    Ono, M.
    Sato, G.
    Ishihara, J.
    Matsuzaka, S.
    Ohno, Y.
    Ohno, H.
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [35] Diode Lasers Emitting at 1190 nm with a Highly Strained GaInAs Quantum Well and GaAsP Compensating Layers MOCVD-grown on a GaAs Substrate
    Vinokurov, D. A.
    Nikolaev, D. N.
    Pikhtin, N. A.
    Stankevich, A. L.
    Shamakhov, V. V.
    Bondarev, A. D.
    Rudova, N. A.
    Tarasov, I. S.
    SEMICONDUCTORS, 2011, 45 (09) : 1227 - 1230
  • [36] Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
    D. A. Vinokurov
    V. A. Kapitonov
    D. N. Nikolaev
    N. A. Pikhtin
    A. L. Stankevich
    V. V. Shamakhov
    A. D. Bondarev
    L. S. Vavilova
    I. S. Tarasov
    Semiconductors, 2011, 45 : 1364 - 1368
  • [37] Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
    D. A. Vinokurov
    D. N. Nikolaev
    N. A. Pikhtin
    A. L. Stankevich
    V. V. Shamakhov
    A. D. Bondarev
    N. A. Rudova
    I. S. Tarasov
    Semiconductors, 2011, 45 : 1227 - 1230
  • [38] Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
    Vinokurov, D. A.
    Kapitonov, V. A.
    Nikolaev, D. N.
    Pikhtin, N. A.
    Stankevich, A. L.
    Shamakhov, V. V.
    Bondarev, A. D.
    Vavilova, L. S.
    Tarasov, I. S.
    SEMICONDUCTORS, 2011, 45 (10) : 1364 - 1368
  • [39] Light-hole resonant tunneling through a tensile-strained GaAsP quantum well
    Appl Phys Lett, 8 (1080):
  • [40] Superluminescent Diode at 0.8-μm with a GaAsP/AlGaAs Tensile-Strained Quantum Well
    Zhou, Shuai
    Tang, Zu-Rong
    Liu, Shang-Jun
    Zhou, Yong
    Zhang, Jing
    Duan, Li-Hua
    Tian, Kun
    Zhao, Kai-Mei
    Feng, Chen
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (18):
12345