Spin-split Conduction Subbands of III-V Semiconductor Heterojunctions

被引：0
|
作者：
Toloza Sandoval, M. A. [1 ]
da Silva, A. Ferreira [1 ]
de Andrada e Silva, E. A. [2 ]
La Rocca, G. C. [3 ]
机构：
[1] Univ Fed Bahia, Inst Fis, Salvador, BA, Brazil
[2] Inst Nacl Pesquisas Espaciais, Albany, NY 12201 USA
[3] CNISM, Piazza Cavalieri, I-56126 Pisa, Italy
来源：
PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷
关键词：
Rashba; 2DEG; heterojunctions; spin-orbit;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The spin-orbit splitting or Rashba alpha parameter at the Fermi energy of 2DEGs in InAlAs/InGaAs heterojunctions is calculated as a function of the electron density, with a variational solution to the multi-band envelope-function model, based on the 8-band Kane model for the bulk. Spin-dependent boundary conditions and mean-field approximation for the electron-electron interaction are used and reasonable good quantitative agreement is obtained with recent Shubnikov-de Haas experimental data.
引用
收藏
页码：391 / +
页数：2
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