Characterizing Voltage Linearity and Leakage Current of High Density Al2O3/HfO2/Al2O3 MIM Capacitors

被引:12
|
作者
Lee, Sung Kyun [1 ]
Kim, Kwan Soo [1 ]
Kim, Soon-Wook [1 ]
Lee, Dal Jin [1 ]
Park, Sang Jong [1 ]
Kim, Sibum [1 ]
机构
[1] MagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South Korea
关键词
High-k metal-insulator-metal (MIM) capacitors; leakage current; thickness dependence; voltage coefficient of the capacitance (VCC); INSULATOR-METAL CAPACITORS; DIELECTRICS;
D O I
10.1109/LED.2010.2099200
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
It was found that the quadratic voltage coefficient of the capacitance (VCC) of Al2O3-based metal-insulator-metal (MIM) capacitors is inversely proportional to the square of the insulator thickness, i.e., similar to t(-2), whereas HfO2-based MIM capacitors exhibit the inverse cube relationship, i.e., similar to t(-3). Using each of their voltage linearity characteristics in combination with the VCC calculation method, the quadratic VCC of Al2O3/HfO2/Al2O3 (A/H/A)-structured MIM capacitors, with various thickness ratios of the Al2O3 and HfO2 insulators, could be well estimated. A large portion of the HfO2 insulators in the A/H/A structures improved the voltage linearity of the MIM capacitors, whereas it deteriorated the dielectric breakdown and the leakage current characteristics.
引用
收藏
页码:384 / 386
页数:3
相关论文
共 50 条
  • [21] Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics
    Martinez-Domingo, C.
    Saura, X.
    Conde, A.
    Jimenez, D.
    Miranda, E.
    Rafi, J. M.
    Campabadal, F.
    Sune, J.
    MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1380 - 1383
  • [22] Low leakage current in metal-insulator-metal capacitors of structural Al2O3/TiO2/Al2O3 dielectrics
    Woo, Jong-Chang
    Chun, Yoon-Soo
    Joo, Young-Hee
    Kim, Chang-Il
    APPLIED PHYSICS LETTERS, 2012, 100 (08)
  • [23] Characterization of Atomic Layer Deposited Al2O3/HfO2 and Ta2O5/Al2O3 Combination Stacks
    Nam, Minwoo
    Kim, Areum
    Kang, Keunwon
    Choi, Eunmi
    Kwon, Soon Hyeong
    Lee, Seon Jae
    Pyo, Sung Gyu
    Science of Advanced Materials, 2016, 8 (10) : 1958 - 1962
  • [24] Thermal stability comparison of TaN on HfO2 and Al2O3
    Kwon, Jinhee
    Chabal, Yves J.
    APPLIED PHYSICS LETTERS, 2010, 96 (15)
  • [25] In situ studies of Al2O3 and HfO2 dielectrics on graphite
    Pirkle, Adam
    Wallace, Robert M.
    Colombo, Luigi
    APPLIED PHYSICS LETTERS, 2009, 95 (13)
  • [26] Physicochemical Interaction in the Al2O3–HfO2–Ln2O3 Systems
    Ya. S. Tishchenko
    Powder Metallurgy and Metal Ceramics, 2014, 53 : 469 - 478
  • [27] Comparison of Multilayer Dielectric Thin Films for Future Metal-Insulator-Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2
    Park, Sang-Uk
    Kwon, Hyuk-Min
    Han, In-Shik
    Jung, Yi-Jung
    Kwak, Ho-Young
    Choi, Woon-Il
    Ha, Man-Lyun
    Lee, Ju-Il
    Kang, Chang-Yong
    Lee, Byoung-Hun
    Jammy, Raj
    Lee, Hi-Deok
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (10)
  • [28] Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors
    Jin, Chengji
    Lu, Hongliang
    Zhang, Yimen
    Zhang, Yuming
    Guan, He
    Wu, Lifan
    Lu, Bin
    Liu, Chen
    SOLID-STATE ELECTRONICS, 2016, 123 : 106 - 110
  • [29] Study of -ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C-V and DLTS
    Cao, Shu-rui
    Ke, Xiao-yu
    Ming, Si-ting
    Wang, Duo-wei
    Li, Tong
    Liu, Bing-yan
    Ma, Yao
    Li, Yun
    Yang, Zhi-mei
    Gong, Min
    Huang, Ming-min
    Bi, Jin-shun
    Xu, Yan-nan
    Xi, Kai
    Xu, Gao-bo
    Majumdar, Sandip
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (12) : 11079 - 11085
  • [30] Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack
    Wu, D
    von Haartman, M
    Seger, J
    Tois, E
    Tuominen, M
    Hellström, PE
    Östling, M
    Zhang, SL
    MICROELECTRONIC ENGINEERING, 2005, 77 (01) : 36 - 41