Study of -ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C-V and DLTS

被引：5
|
作者：
Cao, Shu-rui [1 ,3 ,4 ]
Ke, Xiao-yu [1 ]
Ming, Si-ting [1 ]
Wang, Duo-wei [1 ]
Li, Tong [1 ]
Liu, Bing-yan [1 ]
Ma, Yao [1 ,2 ]
Li, Yun [1 ,2 ]
Yang, Zhi-mei [1 ,2 ]
Gong, Min [1 ,2 ]
Huang, Ming-min [1 ,2 ]
Bi, Jin-shun [3 ,4 ]
Xu, Yan-nan [3 ,4 ]
Xi, Kai [3 ,4 ]
Xu, Gao-bo [3 ,4 ]
Majumdar, Sandip [5 ]
机构：
[1] Sichuan Univ, Coll Phys Sci & Technol, Key Lab Microelect Sichuan Prov, Chengdu 610064, Sichuan, Peoples R China
[2] Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Sichuan, Peoples R China
[3] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[4] Univ Chinese Acad Sci, Beijing 100029, Peoples R China
[5] ICFAI Univ, Dept Sci & Technol, Agartala, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 12期
基金：
中国国家自然科学基金;
关键词：
LEVEL TRANSIENT SPECTROSCOPY; SI; IRRADIATION; DEVICE; TRAPS;
D O I：
10.1007/s10854-019-01450-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gamma-ray radiation effects on the SiO2/HfO2/Al2O3/HfO2/Al2O3 based charge trapping memory have been investigated. Capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements were applied to study the change in electrical properties from total dose radiation. C-V results showed a negative shift of flat-band voltage while dc memory window degraded after gamma-ray radiation. For DLTS result, two original peaks were found degraded while two new peaks appeared after radiation. Both C-V and DLTS results show that Gamma ray leads to the degradation of trapping effect.
引用
收藏
页码：11079 / 11085
页数：7
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