Characterizing Voltage Linearity and Leakage Current of High Density Al2O3/HfO2/Al2O3 MIM Capacitors

被引：12

作者：

Lee, Sung Kyun ^{[1
]}

Kim, Kwan Soo ^{[1
]}

Kim, Soon-Wook ^{[1
]}

Lee, Dal Jin ^{[1
]}

Park, Sang Jong ^{[1
]}

Kim, Sibum ^{[1
]}

机构：

[1] MagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期

关键词：

High-k metal-insulator-metal (MIM) capacitors; leakage current; thickness dependence; voltage coefficient of the capacitance (VCC); INSULATOR-METAL CAPACITORS; DIELECTRICS;

D O I：

10.1109/LED.2010.2099200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It was found that the quadratic voltage coefficient of the capacitance (VCC) of Al2O3-based metal-insulator-metal (MIM) capacitors is inversely proportional to the square of the insulator thickness, i.e., similar to t(-2), whereas HfO2-based MIM capacitors exhibit the inverse cube relationship, i.e., similar to t(-3). Using each of their voltage linearity characteristics in combination with the VCC calculation method, the quadratic VCC of Al2O3/HfO2/Al2O3 (A/H/A)-structured MIM capacitors, with various thickness ratios of the Al2O3 and HfO2 insulators, could be well estimated. A large portion of the HfO2 insulators in the A/H/A structures improved the voltage linearity of the MIM capacitors, whereas it deteriorated the dielectric breakdown and the leakage current characteristics.

引用

页码：384 / 386

页数：3

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