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- [3] Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2019, 37 (04):
- [4] Investigation of the Interface Oxide of Al2O3/HfO2 and HfO2/Al2O3 stacks on GaAs (100) surfaces ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2010, 28 (01): : 311 - 314