In0.7Ga0.3As Channel n-MOSFET with Self-Aligned Ni-InGaAs Source and Drain

被引：36
|
作者：
Zhang, Xingui [1 ,2 ]
Guo, Huaxin [1 ,2 ]
Gong, Xiao [1 ,2 ]
Zhou, Qian [1 ,2 ]
Lin, You-Ru [3 ]
Lin, Hau-Yu [3 ]
Ko, Chih-Hsin [3 ]
Wann, Clement H. [3 ]
Yeo, Yee-Chia [1 ,2 ,3 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Natl Univ Singapore, Grad Sch Integrat Sci & Engn, Singapore 117576, Singapore
[3] Taiwan Semicond Mfg, Hsinchu 300, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
III-V MOSFETS; HIGH-PERFORMANCE; SURFACE PASSIVATION; GATE LENGTH; GERMANIUM; MOBILITY; CONTACTS;
D O I：
10.1149/1.3516213
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A self-aligned Ni-InGaAs metallic source and drain (S/D) technology for In0.7Ga0.3As channel n-MOSFETs (metal-oxide-semiconductor field-effect transistors) is reported. A process was developed for selective contact metallization on InGaAs, comprising a reaction of Ni with InxGa1-xAs to form a metallic Ni-InGaAs material, and a selective removal of excess Ni using a wet etch. Ni-InGaAs has low sheet resistance, is ohmic on n-InxGa1-xAs, and forms a Schottky contact on p-InxGa1-xAs. A self-aligned salicidelike integration scheme was used to realize In0.7Ga0.3As n-MOSFETs with self-aligned Ni-InGaAs metal S/D. n-MOSFETs with a gate length of 1 mu m shows good transfer characteristics with an on-state/off-state drain current ratio of similar to 10(3) and peak transconductance G(m) of 74 mu S/mu m. (c) 2010 The Electrochemical Society. [DOI: 10.1149/1.3516213] All rights reserved.
引用
收藏
页码：H60 / H62
页数：3
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