In0.7Ga0.3As Channel n-MOSFET with Self-Aligned Ni-InGaAs Source and Drain

被引：36

作者：

Zhang, Xingui ^{[1
,2
]}

Guo, Huaxin ^{[1
,2
]}

Gong, Xiao ^{[1
,2
]}

Zhou, Qian ^{[1
,2
]}

Lin, You-Ru ^{[3
]}

Lin, Hau-Yu ^{[3
]}

Ko, Chih-Hsin ^{[3
]}

Wann, Clement H. ^{[3
]}

Yeo, Yee-Chia ^{[1
,2
,3
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Natl Univ Singapore, Grad Sch Integrat Sci & Engn, Singapore 117576, Singapore

[3] Taiwan Semicond Mfg, Hsinchu 300, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

III-V MOSFETS; HIGH-PERFORMANCE; SURFACE PASSIVATION; GATE LENGTH; GERMANIUM; MOBILITY; CONTACTS;

D O I：

10.1149/1.3516213

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A self-aligned Ni-InGaAs metallic source and drain (S/D) technology for In0.7Ga0.3As channel n-MOSFETs (metal-oxide-semiconductor field-effect transistors) is reported. A process was developed for selective contact metallization on InGaAs, comprising a reaction of Ni with InxGa1-xAs to form a metallic Ni-InGaAs material, and a selective removal of excess Ni using a wet etch. Ni-InGaAs has low sheet resistance, is ohmic on n-InxGa1-xAs, and forms a Schottky contact on p-InxGa1-xAs. A self-aligned salicidelike integration scheme was used to realize In0.7Ga0.3As n-MOSFETs with self-aligned Ni-InGaAs metal S/D. n-MOSFETs with a gate length of 1 mu m shows good transfer characteristics with an on-state/off-state drain current ratio of similar to 10(3) and peak transconductance G(m) of 74 mu S/mu m. (c) 2010 The Electrochemical Society. [DOI: 10.1149/1.3516213] All rights reserved.

引用

页码：H60 / H62

页数：3

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