Self-aligned recessed source/drain ultra-thin body SOI MOSFET technology

In this work, a seff-aligned recessed source/drain(ReSID) ultra-thin body (UTB) SOI MOS technology is proposed and demonstrated The thick dilluslon regions of ReSID areplaced on a recessed trench, which is patterned on the buried oxide and go under the SOI film. The new structure reduces The parasitic source/drain resistance wilhout Increasing the gate-to drain miller capacitance which is the major advanlage over the elevated source/drain structure The scalability of the UTB MOSFETs and the larger design window due to reduced parasitics are demonstrated Fabricalion details and experimental results are presented.