Peculiarities of the current-voltage characteristics of oxidized porous silicon

被引：4
|
作者：
Ablova, MS [1 ]
Zamoryanskaya, MV [1 ]
Sokolov, VI [1 ]
Khasanov, RI [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2003年 / 29卷 / 06期
关键词：
Silicon; Porous Silicon; Quantum Size; Nanocomposite Material; Quantum Size Effect;
D O I：
10.1134/1.1589557
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Oxidized porous silicon is a nanocomposite material. The current-voltage characteristics of MOS structures based on this material exhibit some special features (large plateau, oscillations), which can be considered as manifestations of quantum size effects. (C) 2003 MAIK "Nauka/Interperiodica".
引用
收藏
页码：459 / 460
页数：2
相关论文
共 50 条
  • [41] Molecular current-voltage characteristics
    Seminario, JM
    Zacarias, AG
    Tour, JM
    JOURNAL OF PHYSICAL CHEMISTRY A, 1999, 103 (39): : 7883 - 7887
  • [42] INVESTIGATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SILICON-CARBIDE DIODE STRUCTURES
    ANIKIN, MM
    LEBEDEV, AA
    POPOV, IV
    STRELCHUK, AM
    SUVOROV, AV
    SYRKIN, AL
    CHELNOKOV, VE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (05): : 532 - 534
  • [43] CHARACTERISTIC FEATURES OF FORWARD BRANCHES OF CURRENT-VOLTAGE CHARACTERISTICS OF SILICON DIODES
    SOPRYAKO.VI
    TKACHEV, VD
    YUKHNEVI.AV
    YANCHENK.AM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (10): : 1315 - &
  • [44] Utilization of silicon detectors with "ideal-diode" current-voltage characteristics
    Sukhanov, V. L.
    Aruev, P. N.
    Drozdova, M. V.
    Zabrodskaya, N. V.
    Zabrodskiy, V. V.
    Lazeeva, M. S.
    Filimonov, V. V.
    Sherstnev, E. V.
    SEMICONDUCTORS, 2013, 47 (02) : 209 - 212
  • [45] Monitoring current-voltage characteristics and energy output of silicon photovoltaic modules
    van Dyk, EE
    Gxasheka, AR
    Meyer, EL
    RENEWABLE ENERGY, 2005, 30 (03) : 399 - 411
  • [46] INFLUENCE OF RADIATION DEFECTS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF SILICON MULTILAYER STRUCTURES
    ZUBRILOV, AS
    KUZMIN, VA
    MNATSAKANOV, TT
    POMORTSEVA, LI
    SHUMAN, VB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 334 - 335
  • [47] ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS HYDROGENATED SILICON SCHOTTKY DIODES.
    Chen, Inan
    Lee, Sanboh
    Journal of Applied Physics, 1982, 53 (02): : 1045 - 1051
  • [48] Utilization of silicon detectors with “ideal-diode” current-voltage characteristics
    V. L. Sukhanov
    P. N. Aruev
    M. V. Drozdova
    N. V. Zabrodskaya
    V. V. Zabrodskiy
    M. S. Lazeeva
    V. V. Filimonov
    E. V. Sherstnev
    Semiconductors, 2013, 47 : 209 - 212
  • [49] CURRENT-VOLTAGE CHARACTERISTICS OF GRAIN-BOUNDARIES IN CAST POLYCRYSTALLINE SILICON
    SURESH, PR
    RAMKUMAR, K
    SATYAM, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 141 (02): : 381 - 388
  • [50] Current-voltage and low-frequency noise characteristics of structures with porous silicon layers exposed to different gases
    Mkhitaryan, Z. H.
    Shatveryan, A. A.
    Aroutiounian, V. M.
    Ghulinyan, M.
    Pavesi, L.
    Kish, L. B.
    Granqvist, C. G.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 38 (1-2): : 160 - 163
12345