Peculiarities of the current-voltage characteristics of oxidized porous silicon

被引：4

作者：

Ablova, MS ^{[1
]}

Zamoryanskaya, MV ^{[1
]}

Sokolov, VI ^{[1
]}

Khasanov, RI ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2003年 / 29卷 / 06期

关键词：

Silicon; Porous Silicon; Quantum Size; Nanocomposite Material; Quantum Size Effect;

D O I：

10.1134/1.1589557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxidized porous silicon is a nanocomposite material. The current-voltage characteristics of MOS structures based on this material exhibit some special features (large plateau, oscillations), which can be considered as manifestations of quantum size effects. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：459 / 460

页数：2

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