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- [22] Transferred-substrate InP/InGaAs/InP Double Heterojunction Bipolar Transistors with fmax=425 GHz GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001, 2001, : 185 - 187
- [24] Vertical scaling of planarized InP/InGaAs heterojunction bipolar transistors with fT > 350 GHz and fmax > 500 GHz 2005 International Conference on Indium Phosphide and Related Materials, 2005, : 335 - 338
- [25] A 0.24 μm SiGe BiCMOS Technology Featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT PROCEEDINGS OF THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2008, : 97 - +
- [26] A 3.3-V 11.3 GHz LC oscillator in 0.35-μm BiCMOS technology 2007 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS, VOLS 1 AND 2, 2007, : 293 - 296
- [28] Frequency synthesis from 2 to 30 GHz using a 0.35 μm BiCMOS SiGe technology 33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, 2003, : 395 - 398
- [29] A manufacturable 0.35 μm 150 GHz fTSiGe:C bipolar RF technology 2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, : 10 - 13